Award Ceremony and Reception
Awards were attributed to:
- > Sokrates Pantelides, distinguished Professor of Physics and Engineering of Vanderbilt University, USA, in recognition of his contribution to the Micro&Nano scientific field and his support of related activities in Greece
- > Elisabeth Tsoi in recognition of her contribution to the development of the Silicon Processing Technology at the Institute of Microelectronics of NCSR Demokritos
BIOGRAPHICAL NOTE OF SOKRATES PANTELIDES
Professor Sokrates Pantelides graduated from the University of Illinois in 1969 with Highest Scholastic Honors. He received the MSc and PhD degrees from the same University in 1970 and 1973 respectively. After two years of post-doctoral research at Stanford University, he joined the IBM Thomas Watson Research Center in New York, where he worked at different high level position until 1994. He then joined Vanderbilt University, where he has been appointed as:
- > William A. and Nancy McMinn Professor of Physics, (1994 - )
- > Distinguished Visiting Scientist, Oak Ridge National Laboratory (1995 -)
- > Professor of Electrical Engineering, Vanderbilt University (2008 - )
- > Distinguished Professor of Physics and Engineering, Vanderbilt University (2010 - )
During his outstanding career he received several honors and awards, published more than 500 papers in international journals and reviews and gave more than 250 invited talks.
He made seminal contributions to a wide range of areas in condensed matter physics and materials science, the most important of them being:
- Breakthrough in the theory of impurities and point defects in semiconductors, a major unsolved problem in solid state theory. Pantelides developed a theory that could produce a quantum mechanical description of defects at the same level of sophistication and accuracy as was then possible only for perfect crystals and crystal surfaces (1979). His entire career has been marked by seminal contributions to the area of defects in semiconductors.
- He pioneered theoretical calculations in the area of molecular electronics and provided fundamental understanding of molecular junctions.
- Throughout his career, Pantelides made extensive contributions to the fundamental understanding of the structure and properties of silicon dioxide and the Si-SiO2 interface, which is at the heart of modern electronics. His joint work with engineers led to detailed understanding of the atomic-scale physical mechanisms of radiation-induced defects in electronic devices and the mechanisms by which power devices degrade under operating conditions.
- He carried out extensive work in the physics of silicon carbide and silicon-carbide-based devices with experimentalists - they were the first to invent and patent a process for passivating the SiC-SiO2 interface, which led to commercial power devices.
- He pioneered and continues to lead in combining atomic-scale calculations with scanning transmission electron microscope to probe the properties of complex materials and nanostructures, including nanoparticles and two-dimensional materials. Discovered a new form of crystalline order known as "interlaced crystals" and elucidated complex issues in nanocatalysis, batteries, and other energy-related problems.
BIOGRAPHICAL NOTE OF ELIZABETH TSOI
Elizabeth Tsoi was Technical Manager for almost 20 years of the Microelectronics lab of the Institute of Microelectronics at NCSR Demokritos, currently named as Nanotechnology and Microsystems lab of the Institute of Nanoscience and Nanotechnology. She joined NCSR Demokritos in 1983 and was appointed as the technical manager of the above lab in 1992, contributing substantially until she retired in 2010 to the development of Si processing technology, including lithography and etching, thermal and chemical processes, ion implantation, and thin film deposition, as well as corresponding devices and circuits, including MOSFETs, CMOS integrated circuits, non-volatile memories, and microstrip detectors.